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PRODID:-//Dr. Thomas Wagner\, TUM WWW & Online Services//myTUM Advanced Calendaring 0.1//DE
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TZID:Europe/Berlin
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DTSTART:20071028T010000
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SEQUENCE:1
TRANSP:OPAQUE
UID:termine_Event.2014-10-22.6473781843_portal.mytum.de
DTSTART;TZID=Europe/Berlin:20141110T091500
ORGANIZER;CN="Anna-Lena Kersten, kersten@tep.ei.tum.de":mailto:kersten@tep.ei.tum.de
DTSTAMP:20260615T203604
LAST-MODIFIED:20141022T152310
CATEGORIES:VORTRAG
SUMMARY:Resistive Switching Devices
DESCRIPTION:*Resistive switching* refers to the physical phenomena where a dielectric suddenly changes its (two terminal) resistance under the action of a strong electric field or current. The change of resistance can be, both, non-volatile and volatile, and both, reversible and irreversible. Typical resistive switching cells are capacitor like devices, where the electrodes can be an active or inert metals and the dielectric, mostly, a transition metal oxide. The resistive switching device is one of the leading candidates to replace the current non-volatile memory (NOR and NAND Flash) based on the floating gate MOSFET transistor. The resistive switching effect is also at the base of the behavior of the so called memristor devices (postulated and described theoretically by Prof. Chua) and neuromorphic memories.
CONTACT:Anna-Lena Kersten, kersten@tep.ei.tum.de
LOCATION:TUM, Lehrstuhl für Technische Elektrophysik, Theresienstr. 90, Geb. N4, 1. Stock, Raum N1414
CLASS:PUBLIC
URL;VALUE=URL:https://portal.mytum.de/termine/Event.2014-10-22.6473781843
CREATED:20141022T151731
DTEND;TZID=Europe/Berlin:20141110T110000
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